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139 Micron Amorphous Silicon A-Si Curved A-Si DR And Non-Destructive Testing

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139 Micron Amorphous Silicon A-Si Curved A-Si DR And Non-Destructive Testing
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Features
Specifications
Material: Amorphous Silicon Sensor
Temperature: 10-35°C (operating);-10~50°C (storage)
Humidity: 30-70% RH (non-condensing)
Product Name: DR Digital Flat Panel Detector
Receptor Type: A-Si
Scintillator: Gos
Active Area: 350 X 430 Mm
Pixel Pitch: 139μm
Resolution: 2560 X 3072
Basic Infomation
Place of Origin: China
Brand Name: HUATEC
Certification: CE ISO GOST
Model Number: H3543HWF-AG
Payment & Shipping Terms
Packaging Details: export standard carton package
Product Description

139 Micron Amorphous Silicon A-Si Curved A-Si DR And Non-Destructive Testing

 

H3543HWF-AG It is a portable wireless flat detector based on amorphous silicon surface sensor, suitable for pipeline inspection, industrial inspection, non-destructive testing and other fields

 

Sensor
Receptor Type a-Si

Scintillator Gos

Active Area 350 x 430 mm

Resolution 2560 x 3072

Pixel Pitch 139 μm

Power Supply & Battery

Adapter In AC 100-240V,50-60Hz

Adapter Out DC 24V,2.7A

Power Dissipation <20 W

Battery working time 6.5 h

Charging time 4.5 h

 

Image Quality
Limiting Resolution 3.5 LP/mm

Energy Range 40-350 KV

Dynamic Range ≥84 dB

Sensitivity ≥0.54 LSB/nGy

Ghos <1% 1st frame

DQE 42% @(1 LP/mm)

28% @(2 LP/mm)

MTF) 68% @(1 LP/mm)

38% @(2 LP/mm)

20% @(3 LP/mm)

 

Electricals and interface
A/D Conversion 16 bits

Data Interface Gigabit Ethernet/802.11ac 5G

Acquire Time wired: 1s; wireless: 2s

Exposure Control Software/outsside

Inbuilt memory 4 GB DDR4, 8 GB SD card

 

Mechanical
Dimension 583x437x21.8mm
Weight 4.5kg

Material Aluminum and magnesium alloys

Front Panel Carbon fiber

 

Enviromental

Temperature 10-35°C (operating);-10~50°C (storage)

Humidity 30-70% RH (non-condensing)

Ingress Protection IP54

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Get in touch with us
Contact Person : JingAn Chen
Tel : 8610 82921131,86 13261934319
Fax : 86-10-82916893
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