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100 Micron Amorphous Silicon A-Si For Various Fields Such As DR And Non-Destructive Testing

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100 Micron Amorphous Silicon A-Si For Various Fields Such As DR And Non-Destructive Testing
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Features
Specifications
Material: Amorphous Silicon Sensor
Temperature: 10-35°C (operating);-10~50°C (storage)
Humidity: 30-70% RH (non-condensing)
Product Name: DR Digital Flat Panel Detector
Receptor Type: A-Si
Scintillator: Gos / CsI:TI
Active Area: 300 X 254 Mm
Pixel Pitch: 100 μm
Resolution: 2560 X 3072
Basic Infomation
Place of Origin: China
Brand Name: HUATEC
Certification: CE ISO GOST
Model Number: H3025HDA-AG
Payment & Shipping Terms
Packaging Details: export standard carton package
Product Description

100 Micron Amorphous Silicon A-Si For Various Fields Such As DR And Non-Destructive Testing

 

3025DA-AG is a light weight detector based on amorphous silicon(a-Si), which is suitable for Non-destructive testing.

 

Sensor
Receptor Type a-Si

Scintillator Gos / CsI:TI

Active Area 300 x 254 mm

Resolution 2560 x 3072

Pixel Pitch 100 μm

 

Power Supply & Battery

Adapter In AC 100-240V,50-60Hz

Adapter Out DC 24V,2.7A

Power Dissipation <20 W

 

Image Quality
Limiting Resolution 3.5 LP/mm

Energy Range 40-160 KV

Dynamic Range ≥84 dB

Sensitivity ≥0.54 LSB/nGy

Ghos <1% 1st frame

DQE 42% @(1 LP/mm)

28% @(2 LP/mm)

MTF 68% @(1 LP/mm)

38% @(2 LP/mm)

20% @(3 LP/mm)

 

Electricals and interface
A/D Conversion 16 bits

Data Interface Gigabit Ethernet

Frame rate 1x1 5fps/2x2 15fps/3x3 25fps

Exposure Control Free Run/SYNC Acquire

 

Mechanical
Dimension 384 × 460 × 14.8 mm
Weight 3.4kg

Material Aluminum and magnesium alloys

Front Panel Carbon fiber

 

Enviromental

Temperature 10-35°C (operating);-10~50°C (storage)

Humidity 30-70% RH (non-condensing)

Ingress Protection IP51

 

 

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Get in touch with us
Contact Person : JingAn Chen
Tel : 8610 82921131,86 13261934319
Fax : 86-10-82916893
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