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139 micron Amorphous Silicon A-Si For Various Fields Such As DR And Non-Destructive Testing

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139 micron Amorphous Silicon A-Si For Various Fields Such As DR And Non-Destructive Testing
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Features
Specifications
Material: Amorphous Silicon Sensor
Temperature: 10-35°C (operating);-10~50°C (storage)
Humidity: 30-70% RH (non-condensing)
Product Name: DR Digital Flat Panel Detector
Receptor Type: A-Si
Scintillator: Gos / CsI:TI
Active Area: 350 X 430 Mm
Pixel Pitch: 139 μm
Basic Infomation
Place of Origin: China
Brand Name: HUATEC
Certification: CE ISO GOST
Model Number: H3543HWC-EG
Payment & Shipping Terms
Packaging Details: export standard carton package
Product Description

139 Micron Amorphous Silicon A-Si For Various Fields Such As DR And Non-Destructive Testing

 

H3543HWC-EG is a lightweight wireless detector based on amorphous silicon(a-Si), which is suitable for various fields such as DR and Non-destructive testing.

 

Sensor
Receptor Type a-Si

Scintillator Gos / CsI:TI

Active Area 350 x 430 mm

Resolution 2560 x 3072

Pixel Pitch 139 μm

 

Power Supply & Battery

Adapter In AC 100-240V,50-60Hz

Adapter Out DC 24V,2.7A

Power Dissipation <20 W

Standby Time 6.5 h

Recharge Time 4.5 h

 

Image Quality
Limiting Resolution 5 LP/mm

Energy Range 40-160 KV

Dynamic Range ≥76 dB

Sensitivity ≥0.36 LSB/nGy

Ghos <1% 1st frame

DQE 38% @(1 LP/mm)

21% @(2 LP/mm)

MTF 75% @(1 LP/mm)

48% @(2 LP/mm)

28% @(3 LP/mm)

 

 

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Contact Person : JingAn Chen
Tel : 8610 82921131,86 13261934319
Fax : 86-10-82916893
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